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Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)P DC of 10.1 at 30 GHz

https://doi.org/10.1109/DRC50226.2020.9135184

Choi, Woojin ; Balasubramanian, Venkatesh ; Asbeck, Peter M. ; Dayeh, Shadi A. ( June 2020 , 2020 Device Research Conference (2020))
null (Ed.)
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Intrinsically Linear Transistor for Millimeter-Wave Low Noise Amplifiers

https://doi.org/10.1021/acs.nanolett.0c00522

Choi, Woojin ; Chen, Renjie ; Levy, Cooper ; Tanaka, Atsunori ; Liu, Ren ; Balasubramanian, Venkatesh ; Asbeck, Peter M. ; Dayeh, Shadi A. ( April 2020 , Nano Letters)
null (Ed.)
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Structural and electrical characterization of thick GaN layers on Si, GaN, and engineered substrates

https://doi.org/10.1063/1.5049393

Tanaka, Atsunori ; Choi, Woojin ; Chen, Renjie ; Liu, Ren ; Mook, William M. ; Jungjohann, Katherine L. ; Yu, Paul K. ; Dayeh, Shadi A. ( February 2019 , Journal of Applied Physics)

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LUPIS: Latch-up based ultra efficient processing in-memory system

https://doi.org/10.1109/ISQED.2018.8357265

Sim, Joonseop ; Imani, Mohsen ; Choi, Woojin ; Kim, Yeseong ; Rosing, Tajana ( March 2018 , IEEE International Symposium on Quality Electronic Design 2018)

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Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

https://doi.org/10.1002/adma.201702557

Tanaka, Atsunori ; Choi, Woojin ; Chen, Renjie ; Dayeh, Shadi A. ( October 2017 , Advanced Materials)

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Controlled Homoepitaxial Growth of Hybrid Perovskites

https://doi.org/10.1002/adma.201705992

Lei, Yusheng ; Chen, Yimu ; Gu, Yue ; Wang, Chunfeng ; Huang, Zhenlong ; Qian, Haoliang ; Nie, Jiuyuan ; Hollett, Geoff ; Choi, Woojin ; Yu, Yugang ; et al ( April 2018 , Advanced Materials)

Abstract
Organic–inorganic hybrid perovskites have demonstrated tremendous potential for the next‐generation electronic and optoelectronic devices due to their remarkable carrier dynamics. Current studies are focusing on polycrystals, since controlled growth of device compatible single crystals is extremely challenging. Here, the first chemical epitaxial growth of single crystal CH₃NH₃PbBr₃with controlled locations, morphologies, and orientations, using combined strategies of advanced microfabrication, homoepitaxy, and low temperature solution method is reported. The growth is found to follow a layer‐by‐layer model. A light emitting diode array, with each CH₃NH₃PbBr₃crystal as a single pixel, with enhanced quantum efficiencies than its polycrystalline counterparts is demonstrated.

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